| 摘要 |
<p>PURPOSE: A method for fabricating a CIGS thin layer is provided to reduce manufacturing costs and a manufacturing time by simultaneously supplying all precursors into a vacuum chamber. CONSTITUTION: A substrate chuck(20) is arranged inside a vacuum chamber(10). The substrate(S) is installed on the substrate chuck. A shower head(30) is arranged on the top of the vacuum chamber. A shower head supplies copper precursor, indium precursor, gallium precursor, selenium precursor in the vacuum chamber simultaneously. A plurality of canisters(40,50,60,70) supplies the copper precursor, the indium precursor, the gallium precursor, and selenium precursor to the shower head.</p> |
