| 摘要 |
<p>PURPOSE: A flash memory device and a manufacturing method thereof are provided to improve the property of a device by preventing an attack in a floating gate when poly materials between poly gates are removed. CONSTITUTION: A gate oxide film(120) is formed on a semiconductor substrate including a floating gate(110). A photosensitive film is formed on the semiconductor substrate on which the gate oxide film is formed. The photosensitive film is ashed to expose the gate oxide film. The exposed photosensitive film is removed by an etching process using a photoresist pattern. A second poly silicon film is formed on the semiconductor substrate including the photosensitive film between the floating gates. A control gate(155) is formed on both sides of the floating gate. The photosensitive film is removed between the floating gate.</p> |
