| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to improve sensitivity by improving the light concentration efficiency on a photo diode region. CONSTITUTION: Photo diode regions(220) are formed on a semiconductor substrate. An interlayer dielectric layer(225) is formed on the semiconductor substrate with the photo diode regions. A color filter array includes red, green, and blue colors formed on the interlayer dielectric layer to correspond to the photo diode regions. A wave guide layer has a different refractive index from the interlayer dielectric layer and is formed inside the interlayer insulation layer to have the different thickness by corresponding to the red, green, and blue color filters. A micro lens(260) is formed on the color filter layer.
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