| 摘要 |
PURPOSE: A silicon nitride liner formation method at STI structure is proceed the plasma processing [plasma treatment] and nitrogen ion doping process. The disappearance phenomenon of the silicon nitride liner is prevented. CONSTITUTION: A silicon nitride liner(102) is spread to the trench inside of the silicon substrate(100) formed for the forming field oxide film. The silicon nitride film liner surface is plasma processed. The nitrogen ion is to the silicon nitride film liner surface the doping. By using the gas in which the argon gas and helium gas are mixed, the plasma processing operates.
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