发明名称 CRYOGENIC BUSHING STRUCTURE
摘要 PROBLEM TO BE SOLVED: To provide a cryogenic bushing structure for high-voltage application, the structure hardly inducing peeling and cracks in an insulator regardless of immersion of the insulator in a cryogenic liquid and being hardly influenced by bubbles generated from superconductive equipment. SOLUTION: The cryogenic bushing structure has a high-voltage conductor 2, a solid insulator 3 disposed to surround the high-voltage conductor 2, a plurality of concentric intermediate electrodes 12 disposed in the solid insulator 3, and a cryogenic container 17 containing a lower part of the solid insulator 3, wherein the cryogenic bushing structure is characterized in that at least one concentric groove 13 is formed between the plurality of intermediate electrodes 12 located on lower parts of the solid insulator 3. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010153211(A) 申请公布日期 2010.07.08
申请号 JP20080330065 申请日期 2008.12.25
申请人 TOSHIBA CORP 发明人 KOYAMA HIROSHI;HOSHINA KOICHI
分类号 H01B17/26;H01F6/00;H01L39/04 主分类号 H01B17/26
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