| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide slurry capable of achieving the modular removal of a barrier for an ultra low-k insulating material without increasing the removal speed of copper and further of removing a barrier while controlling the erosion of the low-k insulating material. <P>SOLUTION: The aqueous slurry is useful for the chemical mechanical polishing of semiconductor substrates having copper wires. The aqueous slurry includes, by weight percent, 0 to 25 oxidizing agent, 1 to 50 abrasive particles, 0.001 to 10 inhibitor for decreasing static etching of the copper wires, 0.001 to 5 poly (methyl vinyl ether) having a formula as (1) (this poly (methyl vinyl ether) is water soluble and n has a value of at least 5), 0 to 10 copper complexing agent formed during polishing, and water as the rest. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
