SEMICONDUCTOR STRUCTURE, METHOD FOR FORMING SEMICONDUCTOR STRUCTURE, AND METHOD FOR OPERATING SEMICONDUCTOR DEVICE (SOI RADIO FREQUENCY SWITCH WITH ENHANCED SIGNAL FIDELITY AND ELECTRIC ISOLATION)

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor structure capable of performing signal isolation which is enhanced with respect to a semiconductor device from a bottom semiconductor layer in an SOI (Semiconductor On Insulator) substrate, a method for manufacturing the semiconductor structure, and a method for operating the semiconductor structure. SOLUTION: In a method for forming a semiconductor structure, a doped contact region 18 having an opposite conductivity type as a bottom semiconductor layer 10 is provided under a buried insulator layer 20 in the bottom semiconductor layer 10, and at least one conductive via structure 47 and 77 extends from an interconnect-level metal line 94 through a middle-of-line (MOL) dielectric layer 80, a shallow trench isolation structure 33 in a top semiconductor layer 30, and a buried insulator layer 20 to the doped contact region 18. COPYRIGHT: (C)2010,JPO&INPIT