| 摘要 |
PROBLEM TO BE SOLVED: To provide a GaN-based field-effect transistor having a low resistance and a high breakdown voltage with reduced effect of current collapse phenomenon, and to provide a method of manufacturing the same. SOLUTION: The GaN-based field-effect transistor 100 includes a substrate 101, a channel layer 104 composed of a p-type GaN-based semiconductor material formed on the substrate, an electron supply layer 106 composed of the GaN-based semiconductor material having a bandgap energy that is larger than that of the channel layer is formed on the channel layer, a gate insulation film 111 formed on the channel layer 104 exposed by removing a portion of the electron supply layer, a gate electrode 112 formed on the insulation film, a source electrode 109 and a drain electrode 110 formed held the gate electrode therebetween, and a second insulation film 113 different from the gate insulation film 111 formed on the electron supply layer 106 and having a current collapse reducing effect. COPYRIGHT: (C)2010,JPO&INPIT |
