发明名称 ATOMIC LAYER GROWTH APPARATUS
摘要 PROBLEM TO BE SOLVED: To supply a plurality of raw material gases at a desired supply ratio for atomic layer growth. SOLUTION: A raw material gas A supply unit 105 includes a raw material A vaporizer 151, a buffer tank A152, a charge valve A153, a supply valve A154, and a manometer A155. Further, a raw material gas B supply unit 106 includes a raw material B vaporizer 161, a buffer tank B162, a charge valve B163, a supply valve B164, and a manometer B165. A control unit 109 controls the opening extent of the charge valve A153 based upon a value of the pressure in the buffer tank A152 measured by the manometer A155. Further, the control unit 109 controls the opening extent of the charge valve B163 based upon a value of the pressure in the buffer tank B162 measured by the manometer B165. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010153757(A) 申请公布日期 2010.07.08
申请号 JP20080333151 申请日期 2008.12.26
申请人 MITSUI ENG & SHIPBUILD CO LTD 发明人 HATTORI NOZOMI
分类号 H01L21/365;C23C16/448;C23C16/455 主分类号 H01L21/365
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