发明名称 Semiconductor Device, a Method of Using a Semiconductor Device, a Programmable Memory Device, and Method of Producing a Semiconductor Device
摘要 A semiconductor device is described. A channel area is arranged in a semiconductor substrate between a first contact area and a second contact area. A first programmable structure includes a first control structure. The first programmable structure is arranged such that a conductivity of a first section of the channel area depends on a voltage applicable to the first control structure of the first programmable structure and on an information value stored in the first programmable structure. A second programmable structure includes a second control structure. The second programmable structure is arranged such that a conductivity of a second section of the channel area depends on a voltage applicable to the second control structure of the second programmable structure and on an information value stored in the second programmable structure. The first section and the second section of the channel area are electrically connected in series between the first contact area and the second contact area.
申请公布号 US2010172176(A1) 申请公布日期 2010.07.08
申请号 US20090349694 申请日期 2009.01.07
申请人 SOMMER MICHAEL BERNHARD 发明人 SOMMER MICHAEL BERNHARD
分类号 G11C16/04;G11C16/06;H01L21/00 主分类号 G11C16/04
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