| 摘要 |
<p>PURPOSE: A method for manufacturing a flash memory device is provided to simplify a manufacturing process by including the poly silicon pattern in a peripheral circuit region which functions as a mask during an implant process. CONSTITUTION: A cell region and a peripheral circuit region are defined in a semiconductor substrate. A floating gate(115) and a plurality of first gate patterns are formed in the cell region. A poly silicon pattern is formed in the peripheral circuit region. A photo-resist pattern is formed to expose a common source region through the floating gate. A common source line(140) is formed through a first implant process using the photo-resist pattern as a mask. After the photo-resist pattern is eliminated, a drain region is formed in the cell region through a second implant process. The poly silicon pattern is patterned to form a second gate pattern.</p> |
