发明名称 CMP SLURRY COMPOSITION FOR POLISHING METAL WIRING
摘要 PURPOSE: A slurry composition for chemical mechanical polishing is provided to use silica of which surface is coated with metal or metal oxide and to obtain high polishing rate. CONSTITUTION: A slurry composition for chemical mechanical polishing contains 0.01-10 weight% of polishing agent which is a silica of which surface is coated with metal ion or metal oxide, and 0.1-10 weight% of oxidizer. The metal ion coated on the silica surface is one or more kinds selected from a group consisting of cerium, aluminum, zirconium, and titanium. The metal oxide is selected from a group consisting of ceria, alumina, zirconia, and titania.
申请公布号 KR20100080095(A) 申请公布日期 2010.07.08
申请号 KR20080138720 申请日期 2008.12.31
申请人 CHEIL INDUSTRIES INC. 发明人 LIM, GEON JA;KANG, DONG HUN;CHOI, WON YOUNG;KIM, TAE WAN;LEE, IN KYUNG
分类号 C09K3/14 主分类号 C09K3/14
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