| 摘要 |
PURPOSE: A back side of the manufacturing method thereof silver semiconductor substrate and image sensor is eliminated steadily. The sensitivity of the image sensor is improved. CONSTITUTION: A metal(141) and the first interlayer insulating film(142) are formed on the substrate. The bonding wafer(200) is bonded on the first interlayer insulating film. The second inter metal dielectric(150) is formed in the back side of substrate. The contact plug(162) is connected through the second inter metal dielectric and substrate to metal. The metal pad(170) is formed on the second inter metal dielectric. It is connected to the contact plug.
|
