| 摘要 |
PURPOSE: A plasma treatment apparatus and a method for forming an anti-reflection film are provided to prevent a hillock from being formed on the surface of a lower metal pattern due to excessive heat or plasma by controlling the supplying amount of high frequency voltage in RF power unit. CONSTITUTION: A shower head is arranged on the upper side of a processing chamber. A gas inlet is connected to the shower head through a connection pipe. An RF power unit(130) formed an upper electrode and a lower electrode in the process region of the processing chamber. A susceptor(150) is arranged on the lower side of the processing chamber to support a substrate. A remote plasma system(160) is installed in the connection pipe and reaction gas is supplied to the shower head through an ionized-decomposing process.
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