| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a short due to a rip-out of a device isolation layer by improving the adhesion on an interface between a buffer layer and a liner nitride layer with an SiON layer. CONSTITUTION: A pad oxide layer and a pad nitride layer are successively formed on a semiconductor substrate. A trench is formed by selectively etching the pad oxide layer, the pad nitride layer, and the semiconductor substrate. A buffer oxide layer is formed inside the trench. An SiON layer(20) is formed on the buffer oxide layer. The liner nitride layer is formed on the interface of the SiON layer. A device isolation layer(22) is formed by gap-filling the insulation layer in the trench.
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