| 摘要 |
PURPOSE: A method and an apparatus for measuring the amount and density of charges inside an oxide film are provided to inspect the quality of a semiconductor oxide layer by measuring and analyzing capacitance properties of a metal-oxide-silicon structure. CONSTITUTION: A wafer is loaded on an inspection device(302). The capacitance of the oxide film is measured by connecting a high terminal of a capacitance measuring device to a gate electrode and a low terminal of the capacitance measuring device to a wafer electrode(304). The amount of the charges inside the oxide film is calculated by applying a flat-band voltage of the metal-oxide-silicon structure and a work function of the metal-silicon to the capacitance of the oxide film(306). The concentration of the charge inside the oxide film is calculated(308).
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