METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING SELECTIVE PLASMA NITRIDATION

摘要

PURPOSE: A manufacturing method of a semiconductor device is provided to prevent the penetration of boron by selectively nitrifying the gate insulating layer of a PMOS transistor. CONSTITUTION: A semiconductor substrate(21) has a NMOS transistor region and a PMOS transistor region. A gate insulating layer(24) is formed in the front side of the semiconductor substrate. A photosensitive pattern is formed on a gate insulating layer in order to selectively expose the PMOS transistor region. The gate insulating layer of the exposed PMOS transistor region is nitrided. The photosensitive pattern is removed. A P-type polysilicon gate is formed on the nitrided gate insulating layer(24A) of the PMOS transistor region.