发明名称 |
ATOMIC LAYER DEPOSITION APPARATUS |
摘要 |
PURPOSE: An atomic layer deposition device is provided to improve the thickness and the quality of a thin film which is deposited on a substrate by uniformly maintaining the injection amount of deposition gas and the discharge amount of discharging gas. CONSTITUTION: A plurality of substrates are stored in a process chamber performing a deposition process. A susceptor is located inside the process chamber. The susceptor settles a plurality of substrates in a horizontal direction. A shower head(103) is located in the upper part of the susceptor. The shower head comprises a plurality of injection holes(131) spraying deposition gas. A spray pattern varying part(105) selectively opens and closes the injection hole.
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申请公布号 |
KR20100077439(A) |
申请公布日期 |
2010.07.08 |
申请号 |
KR20080135371 |
申请日期 |
2008.12.29 |
申请人 |
K.C.TECH CO., LTD. |
发明人 |
KIM, HYUNG IL;KANG, SEUNG IK |
分类号 |
H01L21/205;C23C16/455 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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