发明名称 ATOMIC LAYER DEPOSITION APPARATUS
摘要 PURPOSE: An atomic layer deposition device is provided to improve the thickness and the quality of a thin film which is deposited on a substrate by uniformly maintaining the injection amount of deposition gas and the discharge amount of discharging gas. CONSTITUTION: A plurality of substrates are stored in a process chamber performing a deposition process. A susceptor is located inside the process chamber. The susceptor settles a plurality of substrates in a horizontal direction. A shower head(103) is located in the upper part of the susceptor. The shower head comprises a plurality of injection holes(131) spraying deposition gas. A spray pattern varying part(105) selectively opens and closes the injection hole.
申请公布号 KR20100077439(A) 申请公布日期 2010.07.08
申请号 KR20080135371 申请日期 2008.12.29
申请人 K.C.TECH CO., LTD. 发明人 KIM, HYUNG IL;KANG, SEUNG IK
分类号 H01L21/205;C23C16/455 主分类号 H01L21/205
代理机构 代理人
主权项
地址