| 摘要 |
PURPOSE: A chemical vapor deposition device and a gas supplying nozzle thereof are provided to prevent damage of a nozzle tip due to plasma damage by roundly forming the edge of a gas injection nozzle tip. CONSTITUTION: A processing gas supplying part supplies process gas to the inside of a chamber. The edge of a nozzle tip(101) spraying the process gas is roundly formed. The nozzle tip includes an outer circumference(101a), an inner circumference, and a cross section(101c) which continues the inner circumference and the outer circumference. An electrostatic chuck executes the role of a bottom electrode. A top electrode supplies plasma ionization energy in the upper part of the chamber.
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