METHOD OF SOLVING PROBLEM OF SHORTENING OF LINE END OF POLYCRYSTALLINE SILICON BY PERFORMING CUT PROCESS TWICE

摘要

PROBLEM TO BE SOLVED: To provide a method of improving an end of a gate strip by performing a cut process twice. SOLUTION: The method includes: a step for providing a substrate having a first active region 40 and a second active region 42; a step for forming a gate electrode layer on the substrate; a step for etching a gate electrode layer so that a first gate strip 60, a second gate strip 62 substantially in parallel with the first gate strip, and a sacrifice strip 66 located between the first active region and the second active region and connected with the first gate strip and the second gate strip although not in parallel with them are left; a step for forming a shielding part that covers part of the first gate strip and the second gate strip and exposes the sacrifice strip and part of the first gate strip and the second gate strip in an opening; and a step for etching the sacrifice strip and the part of the first gate strip and the second gate strip exposed in the opening. COPYRIGHT: (C)2010,JPO&INPIT