| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate treatment method which can improve a selection ratio in etching a silicon layer with respect to an oxide film layer as a mask layer. SOLUTION: The substrate treatment method includes steps for: carrying a wafer W having a SiO<SB>2</SB>layer 62 as a mask layer and a silicon layer 61 as a layer to be treated into a chamber 42 of a treatment module 25, and etching the silicon layer 61 while securing a sufficient thickness for the mask layer by laying a deposit 65 on the surface of the SiO<SB>2</SB>layer 62 by plasma generated from a mixed gas of NF<SB>3</SB>, HBr, O<SB>2</SB>gas and SiCl<SB>4</SB>gas. COPYRIGHT: (C)2010,JPO&INPIT |
