TRENCH MOSFET WITH IMPROVED SOURCE-BODY CONTACT

摘要

A trench MOSFET with improved source-body contact structure is disclosed. The improved contact structure can enlarge the P+ area below to wrap the sidewalls and bottom of source-body contact within P-body region to further enhance the avalanche capability. On the other hand, one of the embodiments disclosed a wider tungsten plug structure to connect source metal, which helps to further reduce the source contact resistance.