| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve an on-resistance property by reducing a current path when a device operates. CONSTITUTION: A high voltage first conductive well(210) is formed on a semiconductor substrate. A second conductive body is formed in the high voltage first conductive well. A source area is formed on the second conductive body. A trench(225) is formed in the high voltage first conductive well. A first insulation oxide layer, a poly silicon layer doped with impurities, and a second insulation oxide layer are successively formed in the trench. A drain region is formed in the high voltage first conductive well on one side of the trench. A poly gate(260) is formed on the high voltage first conductive well.</p> |
