| 摘要 |
<p>PURPOSE: A flash memory device and manufacturing method thereof use the hot carrier injection mode in the program operation. The fast program speed is had. CONSTITUTION: A first memory gate(20a) and the second memory gate(20b) are formed on the substrate(10). The third oxide membrane is formed in the first, and the inner side and outer side surface of the second memory gate. Area-source is formed between the first memory gate and the second memory gate. The source poly contact(29) is formed between the first, and the second memory gate. The first and the second select gate are formed in the first, and the second memory gate outside.</p> |
