| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve the performance characteristic of a device by multiplying the contact area between the junction area and the landing plug and reducing the contact resistance. CONSTITUTION: An element isolation layer(102) is formed on a semiconductor substrate(100). An active area(100a) comprises a gate forming unit and a junction formation unit. A gate(G) is formed on the element isolation layer and the active area. A spacer formed with a nitride layer is arranged on both sidewall of a gate. An epi-silicon layer(104) surrounds a junction area of protruded active area. A conductive layer(110) is formed to fill the space between gates.
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