| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device with high reliability, capable of stably carrying out a test of the semiconductor device, after forming an electrode. <P>SOLUTION: The method of manufacturing the semiconductor device includes a process of forming a first pad 12 and a second pad 13 on a substrate 11, a process of forming a first insulating film 15 on the second pad 13, and not forming the first insulating film 15 on the first pad 12, a process of forming a metal film 16 on the first pad 12 and on the second pad 13, a process of forming the electrode 17 through the metal film 16 on the first pad 12, a process of selectively removing the metal film 16 on the second pad 13, and a process of selectively removing the first insulating film 15 on the second pad 13. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
