| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a body contact hybrid surface semiconductor-on-insulator (HSSOI) device formed on a semiconductor-on-insulator (SOI) substrate, and a manufacturing method thereof. <P>SOLUTION: A portion of a top semiconductor layer of the SOI substrate is patterned into a semiconductor fin 18 having substantially vertical sidewalls. A portion of a body region of the semiconductor fin is exposed on a top surface of the semiconductor fin between two source regions 62 having a doping of a conductivity type opposite to a body region 20 of the semiconductor fin. A metal semiconductor alloy portion 82 is formed directly on the two source regions and the top surface of the exposed body region between the two source regions. The doping concentration of the exposed top portion of the body region can be increased by ion implantation to provide a low-resistance contact to the body region, or a recombination region having a high-density of crystalline defects can be formed. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
