| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve error correction capability in error correction technology of a storage device. Ž<P>SOLUTION: The storage device is provided with error correction circuits (30, 34, 36, 38) for calculating a syndrome value of data and correcting errors from the syndrome value; a circuit (46) in which real data is read out, when error correction cannot be performed, mirror data is read out, while when correction is failed, read out data of real data and mirror data are compared, and an error place is specified; compensating circuits (48, 50) compensating the syndrome value by taking out successively error positions and information of magnitude from the specified one; and a compensating circuit (40) compensating data further with specified error position and magnitude. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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