METHOD OF FORMING FERROMAGNETIC MATERIAL, TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

The present invention provides a method of forming a ferromagnetic material, characterized by including: forming a magnetic element layer 20 on a semiconductor layer 16 formed on an inhibition layer 14; and forming a ferromagnetic layer of a Heusler alloy layer 26 on the inhibition layer 14 by heat treatment to induce the semiconductor layer 16 and the magnetic element layer 20 to react with each other, and a transistor, and a method of manufacturing the same. According to the present invention, the inhibition layer for inhibiting a reaction of the semiconductor layer and the magnetic element layer restricts a semiconductor to be supplied for a reaction of the semiconductor and the magnetic element. Therefore, it is possible to form a ferromagnetic material having a high composition ratio of a magnetic element.