| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element and a manufacturing method thereof capable of preventing a decrease in crystalline performance to precisely control a mixed crystal composition. SOLUTION: An n-type clad layer 12, an n-side guide layer 14, an active layer 16, a p-side guide layer 18, a p-type clad layer 20, and a p-type contact layer 22 are sequentially formed on an n-type GaAs substrate 10. No window structure is formed at the end surface of a laser resonator. The n-side guide layer 14 and the p-side guide layer 18 comprise InGaP with a natural superlattice formed. The band gap of the n-side guide layer 14 and the p-side guide layer 18 is in the range from 1.77 to 1.88 eV at room temperature. COPYRIGHT: (C)2010,JPO&INPIT |
