| 摘要 |
<p>PURPOSE: A method for manufacturing a flash memory device is provided to improve a cell uniformity by performing a self-aligned double spacer process. CONSTITUTION: A first memory gate(20a) and a second memory gate(20b) are formed on a substrate(10). A third oxide film is formed on the entire surface of the substrate on which the first and the second memory gates are formed. A second nitride pattern is formed on substrate between the second memory gate and the first memory gate. A second polysilicon layer is formed on the entire surface of the substrate. A first select gate(30a) and a second select gate(30b) are formed on the external side of the first and the second memory gates. A metal contact(36) is formed in a drain region and a source region.</p> |
