| 摘要 |
<p>PURPOSE: A fine pattern forming method of the semiconductor device uses the capping mask using the etching by-product of the photoresist pattern. The micro-pattern is formed. CONSTITUTION: An etched layer(20) and the first antireflection film(30) are formed on the semiconductor substrate(10). The first photoresist pattern is formed on the first antireflection film. The primary etching process by the first photoresist pattern is advanced and the first anti-reflection pattern and the first etched layer pattern are formed. The first photoresist pattern and the first anti-reflection pattern are removed. The second anti-reflection film is formed on the semiconductor substrate including the first etched layer pattern.</p> |
