SINGLE ELECTRON TRANSISTOR USING MOS BARRIER AND FABRICATION METHOD OF THE SAME

摘要

PURPOSE: A single electron transistor and the manufacturing method thereof using the MOS obstacle use the MOS obstacle as the tunneling barrier. The interface trap and Fermi level pinning phenomenon are prevented. CONSTITUTION: A quantum dot(24) which is to the silicon is formed on the substrate(10). The front side of the quantum dot is surrounded by the insulating layer(32). It leaves the insulating layer in interval and the source and drain are formed. While leaving the insulating layer in interval and protecting the quantum dot, the gate is formed. The silicon forming quantum dot the SOI(Silicon On Insulator).