| 摘要 |
PURPOSE: A manufacturing method of a semiconductor wafer is provided to offer a standard wafer which offers an exact dopant concentration value b forming a reflection preventing film after depositing a BPSG film or PSG film. CONSTITUTION: An insulating layer(12), in which at least one element among Phosphorus or Boron is doped, is formed on a semiconductor substrate(11). A reflection preventing film(13) is formed on the insulating layer. The high temperature annealing is executed on the reflection preventing film. An oxide film is formed on the reflection preventing film where the high temperature annealing is executed. The concentration of the insulating layer is measured. The insulating layer is a PSG(PhosphoSilicate Glass) film or a BPSG(Boron Phosphorus Silicate Glass) film.
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