| 摘要 |
PROBLEM TO BE SOLVED: To provide a method capable of manufacturing a semiconductor device having wiring microfabricated with excellent efficiency by reducing the parasitic capacitance of an insulating film. SOLUTION: A low dielectric constant insulating film 3 after being formed of an organic material is irradiated with an electron beam to form a hydrophilic modified layer 31 which is relatively low in methyl group concentration on a surface side of the low dielectric constant insulating film 3. Further, a groove pattern 6 for wiring, a contact hole, etc., is formed by etching on the low dielectric constant insulating film 3, and a plating layer 10 made of Cu is deposited. At least a portion of the modified layer 31 is polished through polishing by a CMP method to form a conductive pattern 11 of Cu for the wiring, a conductive plug, etc. COPYRIGHT: (C)2010,JPO&INPIT |
