| 摘要 |
PROBLEM TO BE SOLVED: To provide a flash lamp annealing method without causing any damage on an Si wafer. SOLUTION: The method for manufacturing a semiconductor device includes: a process for arranging a flash lamp light source 5 having a plurality of flash lamps, above the Si wafer 1 having a single crystal Si region; a process including a first heat treatment and a second heat treatment of heating the Si wafer by heat radiated from the light source, wherein the Si wafer is heated in each of the first and second heat treatments so as to form such a light intensity distribution on the Si wafer by the light that the intensity has a maximum value in a direction differing from that of a crystal orientation of the single crystal Si region, and an array direction of the plurality of flash lamps in the first heat treatment is different from that in the second heat treatment. The crystal orientation 9 of the single crystal Si region is a cleavage plane orientation of the single crystal Si region. COPYRIGHT: (C)2010,JPO&INPIT
|
