| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for forming an isolation film having a high breakdown voltage while keeping a size-reducing effect for trench isolation by surely filling expanded bottom trenches with an isolation film. SOLUTION: A semiconductor device includes trenches formed on a substrate, each consisting of an upper trench and a bottom trench formed under the upper trench. The bottom trench is wider than the upper trench and is filled with an SOG film or a thermally-oxidized film while the upper trench is filled with an oxide film. COPYRIGHT: (C)2010,JPO&INPIT
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