| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique for manufacturing a deep impurity diffusion region 8 in a short period of time in a technique for securing a required withstanding voltage by forming the deep impurity diffusion region reaching the depth along a dicing line. SOLUTION: A manufacturing method for a vertical bipolar transistor has the following steps of: implanting impurities over a plurality of times while changing an implantation energy when forming an impurity diffusion region in a semiconductor substrate 4; and subsequently subjecting the semiconductor substrate 4 to heat treatment. The semiconductor substrate is subjected to heat treatment after implanting impurities to a plurality of depths L1-L5, thereby forming the deep impurity diffusion region 8 by heat treatment in a short period of time. In the case of a bipolar transistor 2, the peak of the impurity concentration is observed in the plurality of depths L1-L5. COPYRIGHT: (C)2010,JPO&INPIT
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