发明名称 |
METHOD AND APPARATUS FOR FABRICATING A CARBON NANOTUBE TRANSISTOR |
摘要 |
A method of fabricating a nanotube field-effect transistor having unipolar characteristics and a small inverse sub-threshold slope includes forming a local gate electrode beneath the nanotube between drain and source electrodes of the transistor and doping portions of the nanotube. In a further embodiment, the method includes forming at least one trench in the gate dielectric (e.g., a back gate dielectric) and back gate adjacent to the local gate electrode. Another aspect of the invention is a nanotube field-effect transistor fabricated using such a method.
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申请公布号 |
US2010173462(A1) |
申请公布日期 |
2010.07.08 |
申请号 |
US20100727753 |
申请日期 |
2010.03.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
APPENZELLER JOERG;AVOURIS PHAEDON;LIN YU-MING |
分类号 |
H01L21/336;H01L21/32 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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