| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition system and a film deposition method which can securely prevent the deterioration of the in-plane uniformity in the thickness of a film to be deposited on a semiconductor wafer. SOLUTION: The MOCVD system includes: a pedestal 15 including a pedestal body 15a having an upper face supporting a semiconductor wafer S and a pedestal ring part 15b provided integrally to the outer circumference of the pedestal body 15a; an edge ring 120 inserted attachably/detachably to the pedestal ring part 15b from the upper part so as to cover the outer side face of the pedestal body 15a and the upper face and outer side face of the pedestal ring part 15b; and a heater provided at the inside of the pedestal 15 and heating a semiconductor wafer S via the pedestal 15 at the inside of a chamber. The edge ring 120 has an upper face part 127a lower than the upper face of the pedestal body 15a at the inner circumferential edge part, and also has a thermal expansion coefficient lower than the thermal expansion coefficient of the material composing the pedestal ring part 15b. COPYRIGHT: (C)2010,JPO&INPIT
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