发明名称 PAGE BUFFER CIRCUIT FOR ELECTRICALLY REWRITABLE NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND CONTROL METHOD
摘要 Within a page buffer 14 which is coupled to a non-volatile memory cell array 10 and temporally stores data as the data with a predetermined page unit is written in and read out to/from the memory cell array 10, at least one latch circuit 14v-1 including a bit line selector 14s, a page buffer unit circuit 14u including two latch L1, L2, and a latch L3 is set up for a plurality of bit lines. The bit line selector 14s selects one bit line and couples it to the page buffer unit circuit 14u. The latch L1 temporally stores the data which are read out from the memory cell of the selected bit line, and then outputs the data through the latch L2 or L3. On the other hand, the latch L1 temporally stores the programming data inputted through the latch L2 or L3, and after that outputs it to the memory cell of the selected bit line for programming.
申请公布号 US2010172181(A1) 申请公布日期 2010.07.08
申请号 US20090613993 申请日期 2009.11.06
申请人 POWERCHIP SEMICONDUCTOR CORP. 发明人 MURAKAMI HIROKI
分类号 G11C16/02;G11C7/10 主分类号 G11C16/02
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