发明名称 |
DENSIFICATION PROCESS FOR TITANIUM NITRIDE LAYER FOR SUBMICRON APPLICATIONS |
摘要 |
Embodiments of the present invention provide methods of forming and densifying a titanium nitride barrier layer. The densification process is performed at a relatively low RF plasma power and high nitrogen to hydrogen ratio so as to provide a substantially titanium rich titanium nitride barrier layer. In one embodiment, a method for forming a titanium nitride barrier layer on a substrate includes depositing a titanium nitride layer on the substrate by a metal-organic chemical vapor deposition process, and performing a plasma treatment process on the deposited titanium nitride layer, wherein the plasma treatment process operates to densify the deposited titanium nitride layer, resulting in a densified titanium nitride layer, wherein the plasma treatment process further comprises supplying a plasma gas mixture containing a nitrogen gas to hydrogen gas ratio between about 20:1 and about 3:1, and applying less than about 500 Watts RF power to the plasma gas mixture. |
申请公布号 |
WO2010077728(A2) |
申请公布日期 |
2010.07.08 |
申请号 |
WO2009US67312 |
申请日期 |
2009.12.09 |
申请人 |
APPLIED MATERIALS, INC.;RITCHIE, ALAN ALEXANDER;HASSAN, MOHD FADZLI ANWAR |
发明人 |
RITCHIE, ALAN ALEXANDER;HASSAN, MOHD FADZLI ANWAR |
分类号 |
H01L21/205;H01L21/28 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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