| 摘要 |
PURPOSE: An internal voltage generating circuit for a semiconductor memory apparatus is provided to reduce a manufacturing period by allowing a user to easily find out a cause of malfunction of a driver. CONSTITUTION: A reset(100) drives an internal voltage generation circuit. The reset comprises a comparator(110), a drive controller(120), and an output driver(130). The comparator outputs a comparison signal according to a reference voltage level. The drive controller outputs a driving signal in response to the comparison signal and test mode signal. The output driver receives the driving signal and outputs the rest signal. |
