MULTI-BIT FLASH MEMORY AND METHOD FOR MANUFACTURING THE SAME

摘要

Disclosed is a flash memory having at least two gates prepared in one gate structure and a method for manufacturing the same. Each gate can store 1-bit data, and each cell transistor can store at least 2-bit information. In addition, the electric influence from adjacent floating gates is minimized while executing a program because of the varying thicknesses of each tunneling dielectric film. That is to say, electric charge trapping through a certain floating gate can be performed regardless of electromagnetic influence from the adjacent floating gates as a result of the height difference among the floating gates.