| 摘要 |
<p>PURPOSE: A method of manufacturing a mask for a semiconductor device is provided to suppress footing which is generated in a metal wiring and increase resolution. CONSTITUTION: Pattern(3A, 3B, 3C) are formed within a mask. A first pattern(310) has first extension lines, from the edge of the patterns, which penetrates the first patterns. Extension lines of a first group are set based on the edges of the patterns in the horizontal direction. Extension lines of a second group which are separated from the extension line of the first group are set based on the edges of the patterns in the horizontal direction. A semi-pattern is formed by removing patterns between the extension lines of the first and second group.</p> |
