| 摘要 |
<p>PURPOSE: A method for forming a mask pattern for a semiconductor device is provided to secure a distance between a main pattern and a dummy pattern by preventing an asymmetrical dummy pattern around the main pattern. CONSTITUTION: A dummy pattern is formed in a mask(310). The dummy pattern is eliminated based on the distance to a reference pattern(320) adjacent to a central line(6C) passing through the center of the dummy pattern.</p> |
