| 摘要 |
<p>PURPOSE: It improves the profile of the gate electrode and transistor and manufacturing method thereof improve the gap fill performance of the interlayer insulating film formed on the top. The generation of the void is prevented. CONSTITUTION: A layer of conductive material(105) is formed on the semiconductor substrate(101). A lattice damage layer(107) damaging lattice is formed about a part thickness of the layer of conductive material. The gate electrode having the level difference in the lattice damage layer and side the layer of conductive material is patterned is formed. The source/drain is formed based on the gate electrode within the semiconductor substrate of the either side.</p> |
