MULTI-BIT FERROELECTRIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A multi bit ferroelectric memory device and a manufacturing method thereof are provided to implement a multi bit by applying an electric field with different intensity according to the thickness of the insulation layer even though the same voltage is applied to a top electrode. CONSTITUTION: A multi-bit ferroelectric memory device comprises a bottom electrode, a top electrode(130), and a memory layer(120). The top electrode is formed on the bottom electrode. The memory layer is arranged between the top and bottom electrodes. The memory layer includes a ferroelectric layer and an insulation material pattern(121) on the upper or lower side of the ferroelectric layer. The insulation material pattern includes a first insulation unit with a first thickness and a second insulation unit with a second thickness.