| 摘要 |
<p>PURPOSE: A method for manufacturing of a semiconductor device is provided to implement a MOSFET without an SOI wafer by forming a SOI(Silicon-On-Insulator) structure through an STI(Shallow Trench Isolation) process. CONSTITUTION: An STI(102) is formed in a semiconductor substrate(101). An EPI(Epitaxial) film(103) is formed on the semiconductor substrate. The EPI film is patterned with a first etching process. An insulating layer(105) is formed on the STI and the EPI film. The insulating layer is removed in order to expose the EPI film to the outside. An oxide film and a poly-silicon are successively formed on an exposed EPI film. The gate oxidation film and a polygate are formed by a second etching process. The spacer is formed in the sidewall of the polygate.</p> |
