| 摘要 |
PURPOSE: A MIM capacitor and a method of manufacture thereof are provided to embody MIM capacitors having the different capacitance value on the same wafer. It can be applied to the device having the property of the various or the chip. CONSTITUTION: It is formed on the MIM(Metal-Insulator-Metal) capacitor semiconductor substrate(200) having the different capacitance. The insulator of the first MIM capacitor(C1) has the bottom electrode(100) and one structure consisting of the first oxide film which is successively laminated between the upper electrode(120) and is formed, and the nitride film and second oxide film. The insulator of the second MIM capacitor(C2) has the bottom electrode and ON structure consisting of the first oxide film which is successively laminated between the upper electrode and is formed and nitride film.
|
